Computer Simulation Laboratory (CSL), established in 1997, addresses both research and educational aspects of diffusion (Electromigration, Thermal Grooving), mechanical spectroscopy that will be necessary to solve critical technological needs of the twenty-first century. The Center pioneers a number of applications such as Elecromigration, Internal Friction, Grain Boundary Grooving, and Sintering.
Recent Simulation Results:
Theory Behind the Simulations
What is Electromigration?
Electromigration is generally considered to be the result of momentum transfer from the electrons, which move in the applied electric field, to the ions which make up the lattice of the interconnect material.
Electromigration causes several different kinds of failure in narrow interconnect. The most familiar are void failures along the length of the line (called internal failures) and diffusive displacements at the terminals of the line that destroy electrical contact. Recent research has shown that both of these failure modes are strongly affected by the microstructure of the line and can, therefore be delayed or overcome by metallurgical changes that alter the microstructure.